Keyphrases
Gallium Arsenide
55%
Zinc Selenide
41%
Photoluminescence
39%
Molecular Beam Epitaxy
37%
Low-temperature Photoluminescence
34%
Heteroepitaxial Structures
31%
Linear Circuit Analysis
26%
4H-SiC
25%
High Purity
23%
Exciton
23%
Step-based Tutoring
19%
Acceptor Level
19%
Low Temperature
18%
Stacking Faults
18%
Undoped
18%
Epitaxial
18%
Hydrides
18%
Metal-organic Chemical Vapor Deposition (MOCVD)
18%
Photoluminescence Spectra
18%
Shallow Acceptor
16%
Tutoring System
15%
Bound Exciton
15%
Ion Implantation
14%
Luminescence
14%
Excited States
14%
Quantum Well
13%
Cm(III)
13%
Annealing
13%
Free Exciton
13%
Binding Energy
13%
Bulk GaN
12%
Optical Characterization
12%
Vapor Phase
12%
P-type
12%
Ionization Energy
11%
Photoluminescence Measurements
10%
Student Learning
10%
Magnetospectroscopy
10%
Structural Defects
9%
Barrier Height
9%
Mg Acceptor
9%
Hydride Vapor Phase Epitaxy
9%
Neutral Donors
9%
High Temperature
9%
Donor Bound Exciton
9%
Mesh Analysis
9%
Superlattices
8%
Epilayer
8%
Optical Spectroscopy
8%
Excitation Intensity
8%
Material Science
Photoluminescence
100%
Gallium Arsenide
61%
Molecular Beam Epitaxy
39%
Surface (Surface Science)
32%
Luminescence
26%
Hydride
21%
Chemical Vapor Deposition
19%
Crystal Defect
15%
Vapor Phase Epitaxy
14%
Epilayers
13%
Superlattice
12%
Schottky Barrier
10%
Epitaxial Film
9%
Schottky Diode
9%
Quantum Well
9%
Carrier Concentration
8%
Annealing
8%
Optical Spectroscopy
8%
Sapphire
8%
Oxidation Reaction
7%
Aluminum Nitride
7%
Heterojunction
6%
Film
5%
Aluminium Gallium Arsenide
5%
Gallium Nitride
5%
Capacitance
5%
Single Crystal
5%
Platelet
5%
Engineering
Gallium Arsenide
56%
Low-Temperature
38%
Linear Circuit
25%
Electric Network Analysis
22%
Chemical Vapor Deposition
18%
Vapor Deposition
18%
Acceptor Level
16%
Superlattice
12%
Barrier Height
12%
Schottky Barrier
11%
Room Temperature
11%
Nodes
9%
Passivation
9%
Aluminium Gallium Arsenide
8%
Carrier Concentration
8%
Deep Level
7%
Doping Level
7%
Quantum Well
7%
Excited State
7%
Band Bending
6%
Magnetic Field
6%
Mesh Analysis
6%
Growth Temperature
6%
Basal Plane
6%
Binding Energy
6%
Conduction Band
6%
Gaas Layer
5%
Electrical Measurement
5%
Thermal Strain
5%
Heterostructures
5%
Grown Material
5%
Reflectance
5%
Transients
5%
Flat Surface
5%
Gaas Substrate
5%
Ionization Potential
5%