ZnGeAs2 thin films properties: A potentially useful semiconductor for photovoltaic applications

T. J. Peshek; Z. Tang; L. Zhang; Rakesh Singh; B. To; T. A. Gessert; T. J. Coutts; Nathan Newman; M. Van Schilfgaarde

doi:10.1109/PVSC.2009.5411281

ZnGeAs₂ thin films properties: A potentially useful semiconductor for photovoltaic applications

T. J. Peshek, Z. Tang, L. Zhang, Rakesh Singh, B. To, T. A. Gessert, T. J. Coutts, Nathan Newman, M. Van Schilfgaarde

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

We have studied the chalcopyrite compound ZnGeAs₂ to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm²√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 10¹⁸ - 10¹⁹ for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 10⁴ 1/cm at 1.2 eV. These properties suggest ZnGeAs₂ may be used to produce cost effective and efficient solar cells.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	1367-1369
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2009.5411281
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411281

Cite this

Peshek, T. J., Tang, Z., Zhang, L., Singh, R., To, B., Gessert, T. A., Coutts, T. J., Newman, N., & Van Schilfgaarde, M. (2009). ZnGeAs₂ thin films properties: A potentially useful semiconductor for photovoltaic applications. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1367-1369). Article 5411281 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411281

ZnGeAs₂ thin films properties: A potentially useful semiconductor for photovoltaic applications. / Peshek, T. J.; Tang, Z.; Zhang, L. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1367-1369 5411281 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Peshek, TJ, Tang, Z, Zhang, L, Singh, R, To, B, Gessert, TA, Coutts, TJ, Newman, N & Van Schilfgaarde, M 2009, ZnGeAs₂ thin films properties: A potentially useful semiconductor for photovoltaic applications. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411281, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1367-1369, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411281

@inproceedings{9243fb6c1de04acdb11b3a0e90884324,

title = "ZnGeAs2 thin films properties: A potentially useful semiconductor for photovoltaic applications",

abstract = "We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.",

author = "Peshek, {T. J.} and Z. Tang and L. Zhang and Rakesh Singh and B. To and Gessert, {T. A.} and Coutts, {T. J.} and Nathan Newman and {Van Schilfgaarde}, M.",

year = "2009",

doi = "10.1109/PVSC.2009.5411281",

language = "English (US)",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1367--1369",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

TY - GEN

T1 - ZnGeAs2 thin films properties

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

AU - Peshek, T. J.

AU - Tang, Z.

AU - Zhang, L.

AU - Singh, Rakesh

AU - To, B.

AU - Gessert, T. A.

AU - Coutts, T. J.

AU - Newman, Nathan

AU - Van Schilfgaarde, M.

PY - 2009

Y1 - 2009

N2 - We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

AB - We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

UR - http://www.scopus.com/inward/record.url?scp=77951526928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951526928&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2009.5411281

DO - 10.1109/PVSC.2009.5411281

M3 - Conference contribution

AN - SCOPUS:77951526928

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1367

EP - 1369

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -