VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

Changhong Chen; Yanhan Zhu; Yong Zhao; Joon Hwan Lee; Haiyan Wang; Ayrton Bernussi; Mark Holtz; Zhaoyang Fan

doi:10.1063/1.3519361

VO₂ multidomain heteroepitaxial growth and terahertz transmission modulation

Changhong Chen, Yanhan Zhu, Yong Zhao, Joon Hwan Lee, Haiyan Wang, Ayrton Bernussi, Mark Holtz, Zhaoyang Fan

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Abstract

We report the epitaxial relationship of VO₂ thin-films on c -plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO₂ and sapphire hexagon. The epitaxial relationship is determined to be VO₂ [010] Al₂ O ₃ [0001] and VO₂ (2- 02) Al₂ O₃ { 11 2- 0 }, with the in-plane lattice mismatch of 2.66% (tensile) along [2- 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO₂ films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.

Original language	English (US)
Article number	211905
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3519361
State	Published - Nov 22 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3519361

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title = "VO2 multidomain heteroepitaxial growth and terahertz transmission modulation",

abstract = "We report the epitaxial relationship of VO2 thin-films on c -plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2 [010] Al2 O 3 [0001] and VO2 (2- 02) Al2 O3 { 11 2- 0 }, with the in-plane lattice mismatch of 2.66% (tensile) along [2- 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.",

author = "Changhong Chen and Yanhan Zhu and Yong Zhao and Lee, {Joon Hwan} and Haiyan Wang and Ayrton Bernussi and Mark Holtz and Zhaoyang Fan",

note = "Funding Information: The authors acknowledge the support for this work from the U.S. Army CERDEC (Grant No. W15P7T-07-D-P040) and the J. F. Maddox Foundation. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

month = nov,

day = "22",

doi = "10.1063/1.3519361",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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T1 - VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

AU - Chen, Changhong

AU - Zhu, Yanhan

AU - Zhao, Yong

AU - Lee, Joon Hwan

AU - Wang, Haiyan

AU - Bernussi, Ayrton

AU - Holtz, Mark

AU - Fan, Zhaoyang

N1 - Funding Information: The authors acknowledge the support for this work from the U.S. Army CERDEC (Grant No. W15P7T-07-D-P040) and the J. F. Maddox Foundation. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/11/22

Y1 - 2010/11/22

N2 - We report the epitaxial relationship of VO2 thin-films on c -plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2 [010] Al2 O 3 [0001] and VO2 (2- 02) Al2 O3 { 11 2- 0 }, with the in-plane lattice mismatch of 2.66% (tensile) along [2- 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.

AB - We report the epitaxial relationship of VO2 thin-films on c -plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2 [010] Al2 O 3 [0001] and VO2 (2- 02) Al2 O3 { 11 2- 0 }, with the in-plane lattice mismatch of 2.66% (tensile) along [2- 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

VO₂ multidomain heteroepitaxial growth and terahertz transmission modulation

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