Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells

W. Chen; Hugh Barnaby; Michael Kozicki

doi:10.1109/LED.2016.2540361

Volatile and Non-Volatile Switching in Cu-SiO₂ Programmable Metallization Cells

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO₂ programmable metallization cell. With a porous e-beam evaporated SiO₂ switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 10⁷. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO₂ switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO₂.

Original language	English (US)
Article number	7429703
Pages (from-to)	580-583
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/LED.2016.2540361
State	Published - May 2016

Keywords

Cu diffusion
PMC
SiO
crosspoint array
memory switching
selector device
threshold switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2016.2540361

Cite this

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title = "Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells",

abstract = "In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.",

keywords = "Cu diffusion, PMC, SiO, crosspoint array, memory switching, selector device, threshold switching",

author = "W. Chen and Hugh Barnaby and Michael Kozicki",

note = "Funding Information: This work was supported in part by the Defense Threat Reduction Agency under Grant HDTRA1-11-1-0055 and in part by the Air Force Research Laboratory under Grant FA9452-15-1-0080. The review of this letter was arranged by Editor L. Selmi. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AB - In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

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KW - PMC

KW - SiO

KW - crosspoint array

KW - memory switching

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