Use of silicon nitride in buried contact solar cells

Bernhard Vogl; Alexander M. Slade; Stephen C. Pritchard; Mark Gross; Christiana B. Honsberg; Jeffrey E. Cotter; Stuart R. Wenham

doi:10.1016/S0927-0248(00)00153-7

Use of silicon nitride in buried contact solar cells

Bernhard Vogl
, Alexander M. Slade
, Stephen C. Pritchard
, Mark Gross
, Christiana B. Honsberg
, Jeffrey E. Cotter
, Stuart R. Wenham

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

Original language	English (US)
Pages (from-to)	17-25
Number of pages	9
Journal	Solar Energy Materials and Solar Cells
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(00)00153-7
State	Published - Feb 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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10.1016/S0927-0248(00)00153-7

Cite this

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title = "Use of silicon nitride in buried contact solar cells",

abstract = "Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.",

author = "Bernhard Vogl and Slade, \{Alexander M.\} and Pritchard, \{Stephen C.\} and Mark Gross and Honsberg, \{Christiana B.\} and Cotter, \{Jeffrey E.\} and Wenham, \{Stuart R.\}",

note = "Funding Information: The authors would like to thank Anja Aberle and Hamid Mehrvarz for assistance in processing of test structures. The Photovoltaics Special Research Centre is supported by the Australian Research Council. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

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language = "English (US)",

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AU - Vogl, Bernhard

AU - Slade, Alexander M.

AU - Pritchard, Stephen C.

AU - Gross, Mark

AU - Honsberg, Christiana B.

AU - Cotter, Jeffrey E.

AU - Wenham, Stuart R.

N1 - Funding Information: The authors would like to thank Anja Aberle and Hamid Mehrvarz for assistance in processing of test structures. The Photovoltaics Special Research Centre is supported by the Australian Research Council. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

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Y1 - 2001/2

N2 - Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

AB - Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

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IS - 1-4

ER -

Use of silicon nitride in buried contact solar cells

Abstract

ASJC Scopus subject areas

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