Use of pockers readout optical modulators (PROMS) for atomic resolution electron image processing

John Spence; A. Olsen

doi:10.1117/12.958520

Use of pockers readout optical modulators (PROMS) for atomic resolution electron image processing

John Spence, A. Olsen

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The usefulness of PROMS for high resolution electron microscopy is outlined. A theoretical model for direct electron beam image storage in PROMS is given, and computed results discussed. Wear-atomic resolution electron images of the Bi₁₂Si0₂₀ crystal structure are shown and discussed.

Original language	English (US)
Pages (from-to)	154-160
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	218
DOIs	https://doi.org/10.1117/12.958520
State	Published - Apr 25 1980

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Use of pockers readout optical modulators (PROMS) for atomic resolution electron image processing",

abstract = "The usefulness of PROMS for high resolution electron microscopy is outlined. A theoretical model for direct electron beam image storage in PROMS is given, and computed results discussed. Wear-atomic resolution electron images of the Bi12Si020 crystal structure are shown and discussed.",

author = "John Spence and A. Olsen",

year = "1980",

month = apr,

day = "25",

doi = "10.1117/12.958520",

language = "English (US)",

volume = "218",

pages = "154--160",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Use of pockers readout optical modulators (PROMS) for atomic resolution electron image processing

AU - Spence, John

AU - Olsen, A.

PY - 1980/4/25

Y1 - 1980/4/25

N2 - The usefulness of PROMS for high resolution electron microscopy is outlined. A theoretical model for direct electron beam image storage in PROMS is given, and computed results discussed. Wear-atomic resolution electron images of the Bi12Si020 crystal structure are shown and discussed.

AB - The usefulness of PROMS for high resolution electron microscopy is outlined. A theoretical model for direct electron beam image storage in PROMS is given, and computed results discussed. Wear-atomic resolution electron images of the Bi12Si020 crystal structure are shown and discussed.

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AN - SCOPUS:84950882897

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Use of pockers readout optical modulators (PROMS) for atomic resolution electron image processing

Abstract

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