Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys

Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (0<x<0.50). Compelling evidence is presented for one-mode behavior for the A1(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.

Original languageEnglish (US)
Pages (from-to)798-800
Number of pages3
JournalJournal of Applied Physics
Issue number1
StatePublished - Jan 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys'. Together they form a unique fingerprint.

Cite this