@inproceedings{8efc5e88ff884a23bd3ed841469e2e57,
title = "Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN",
abstract = "Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5×10 7 cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2×10 8 cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.",
keywords = "Carrier transport, InN, Raman spectroscopy",
author = "Kong-Thon Tsen and C. Poweleit and Ferry, {D. K.} and Hai Lu and Schaff, {William J.}",
year = "2006",
month = may,
day = "23",
doi = "10.1117/12.651190",
language = "English (US)",
isbn = "0819461601",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X",
note = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X ; Conference date: 23-01-2006 Through 25-01-2006",
}