Ultra thin Al2O3 passivation for hetero-junction Si solar cell

Sangpyeong Kim; Pradeep Balaji; Andre Augusto; Stuart Bowden; Christiana B. Honsberg

doi:10.1109/PVSC40753.2019.8980907

Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell

Sangpyeong Kim
, Pradeep Balaji
, Andre Augusto
, Stuart Bowden
, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

This work focuses on ultra thin (≤ 1nm) Al₂O₃ passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al₂O₃. To promote carrier transportation across the Al₂O₃ layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO₂-Al₂O₃ (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.

Original language	English (US)
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2684-2687
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980907
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: Jun 16 2019 → Jun 21 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	6/16/19 → 6/21/19

Keywords

AlO passivation
hetero-junction
silicon solar cell
ultra thin AlO

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8980907

Cite this

Kim, S., Balaji, P., Augusto, A., Bowden, S., & Honsberg, C. B. (2019). Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2684-2687). Article 8980907 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980907

Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell. / Kim, Sangpyeong; Balaji, Pradeep; Augusto, Andre et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2684-2687 8980907 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, S, Balaji, P, Augusto, A, Bowden, S & Honsberg, CB 2019, Ultra thin Al₂O₃ passivation for hetero-junction Si solar cell. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980907, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2684-2687, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 6/16/19. https://doi.org/10.1109/PVSC40753.2019.8980907

@inproceedings{6cde733c15e740f986eebae8e976f4c5,

title = "Ultra thin Al2O3 passivation for hetero-junction Si solar cell",

abstract = "This work focuses on ultra thin (≤ 1nm) Al2O3 passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al2O3. To promote carrier transportation across the Al2O3 layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO2-Al2O3 (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.",

keywords = "AlO passivation, hetero-junction, silicon solar cell, ultra thin AlO",

author = "Sangpyeong Kim and Pradeep Balaji and Andre Augusto and Stuart Bowden and Honsberg, \{Christiana B.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980907",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2684--2687",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

}

TY - GEN

T1 - Ultra thin Al2O3 passivation for hetero-junction Si solar cell

AU - Kim, Sangpyeong

AU - Balaji, Pradeep

AU - Augusto, Andre

AU - Bowden, Stuart

AU - Honsberg, Christiana B.

PY - 2019/6

Y1 - 2019/6

N2 - This work focuses on ultra thin (≤ 1nm) Al2O3 passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al2O3. To promote carrier transportation across the Al2O3 layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO2-Al2O3 (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.

AB - This work focuses on ultra thin (≤ 1nm) Al2O3 passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al2O3. To promote carrier transportation across the Al2O3 layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO2-Al2O3 (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.

KW - AlO passivation

KW - hetero-junction

KW - silicon solar cell

KW - ultra thin AlO

UR - https://www.scopus.com/pages/publications/85081621080

UR - https://www.scopus.com/pages/publications/85081621080#tab=citedBy

U2 - 10.1109/PVSC40753.2019.8980907

DO - 10.1109/PVSC40753.2019.8980907

M3 - Conference contribution

AN - SCOPUS:85081621080

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2684

EP - 2687

BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -