This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.
|Original language||English (US)|
|Number of pages||8|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|State||Published - Oct 2007|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering