Two-terminal nanocrystalline silicon memory device at room temperature

A. H M Kamal; J. Lutzen; B. A. Sanborn; M. V. Sidorov; Michael Kozicki; David Smith; D. K. Ferry

doi:10.1088/0268-1242/13/11/018

Two-terminal nanocrystalline silicon memory device at room temperature

A. H M Kamal, J. Lutzen, B. A. Sanborn, M. V. Sidorov, Michael Kozicki, David Smith, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.

Original language	English (US)
Pages (from-to)	1328-1332
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	13
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/13/11/018
State	Published - Nov 1 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/13/11/018

Cite this

@article{b2e4b45dea7e406c80fbaaca481d0f88,

title = "Two-terminal nanocrystalline silicon memory device at room temperature",

abstract = "We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.",

author = "Kamal, {A. H M} and J. Lutzen and Sanborn, {B. A.} and Sidorov, {M. V.} and Michael Kozicki and David Smith and Ferry, {D. K.}",

year = "1998",

month = nov,

day = "1",

doi = "10.1088/0268-1242/13/11/018",

language = "English (US)",

volume = "13",

pages = "1328--1332",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "11",

}

TY - JOUR

T1 - Two-terminal nanocrystalline silicon memory device at room temperature

AU - Kamal, A. H M

AU - Lutzen, J.

AU - Sanborn, B. A.

AU - Sidorov, M. V.

AU - Kozicki, Michael

AU - Smith, David

AU - Ferry, D. K.

PY - 1998/11/1

Y1 - 1998/11/1

N2 - We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.

AB - We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.

UR - http://www.scopus.com/inward/record.url?scp=0032204463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032204463&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/13/11/018

DO - 10.1088/0268-1242/13/11/018

M3 - Article

AN - SCOPUS:0032204463

SN - 0268-1242

VL - 13

SP - 1328

EP - 1332

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -

Two-terminal nanocrystalline silicon memory device at room temperature

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this