Twin-domain epitaxial growth and metal-insulator transition of VO 2 thin film on C-plane sapphire

Changhong Chen, Yong Zhao, Xuan Pan, Mark Holtz, Zhaoyang Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We report heteroepitaxial growth of VO2 thin film on c-plane sapphire by pulsed DC magnetron sputtering. X-ray diffraction experiment indicates that the 150 nm thick film is in triple-domain (020)-epitaxial structure with six-fold rotational symmetry in the basal plane; in particular, off-axis Φ scans from (011) and (220) show twin and triple peaks in each group of the diffraction profiles due to angle β mismatch and V 4+-V4+ dimerization, respectively. The epitaxial relationship between VO2 and c-plane sapphire can be concluded as be VO2 [010] || Al2O3 [0001] and VO2 (202) || Al2O3 {1120}, with the in-plane lattice mismatch of 2.66% (tensile) along [202] and the out-of-plane lattice mismatch of-2.19% (compressive). Temperature dependence of resistivity in van der Pauw method shows that the resistivity changes by ∼5 orders of magnitude through the metal-insulator transition, and a narrow hysteresis window of ∼3 K is obtained between cooling and heating cycles with respect to phase-transition temperatures at 347.1 and 350.1 K.

Original languageEnglish (US)
Title of host publicationOxide Nanoelectronics
Number of pages6
StatePublished - 2011
Externally publishedYes
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2010 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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