Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

R. B. Liu; X. J. Zhuang; J. Y. Xu; D. B. Li; Q. L. Zhang; K. Ding; P. B. He; Cun-Zheng Ning; B. S. Zou; A. L. Pan

doi:10.1063/1.3672032

Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

R. B. Liu, X. J. Zhuang, J. Y. Xu, D. B. Li, Q. L. Zhang, K. Ding, P. B. He, Cun-Zheng Ning, B. S. Zou, A. L. Pan

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

Original language	English (US)
Article number	263101
Journal	Applied Physics Letters
Volume	99
Issue number	26
DOIs	https://doi.org/10.1063/1.3672032
State	Published - Dec 26 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3672032

Cite this

@article{451cc71b8c264e4ba6bfcfe1388da09c,

title = "Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers",

abstract = "High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.",

author = "Liu, {R. B.} and Zhuang, {X. J.} and Xu, {J. Y.} and Li, {D. B.} and Zhang, {Q. L.} and K. Ding and He, {P. B.} and Cun-Zheng Ning and Zou, {B. S.} and Pan, {A. L.}",

note = "Funding Information: The first three authors contributed equally to this paper. This work was supported by the NSF of China (Term Nos. 90923014, 10974050, and 51002011), the National Basic Research Program of China (No. 2012CB932703), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars (09JJ1009), the Program for New Century Excellent Talents in University (NCET-08-0182), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.",

year = "2011",

month = dec,

day = "26",

doi = "10.1063/1.3672032",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

AU - Liu, R. B.

AU - Zhuang, X. J.

AU - Xu, J. Y.

AU - Li, D. B.

AU - Zhang, Q. L.

AU - Ding, K.

AU - He, P. B.

AU - Ning, Cun-Zheng

AU - Zou, B. S.

AU - Pan, A. L.

N1 - Funding Information: The first three authors contributed equally to this paper. This work was supported by the NSF of China (Term Nos. 90923014, 10974050, and 51002011), the National Basic Research Program of China (No. 2012CB932703), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars (09JJ1009), the Program for New Century Excellent Talents in University (NCET-08-0182), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.

PY - 2011/12/26

Y1 - 2011/12/26

N2 - High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

AB - High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

UR - http://www.scopus.com/inward/record.url?scp=84862931624&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862931624&partnerID=8YFLogxK

U2 - 10.1063/1.3672032

DO - 10.1063/1.3672032

M3 - Article

AN - SCOPUS:84862931624

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263101

ER -

Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this