TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.

P. Das; D. K. Ferry; A. H. Barr

TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.

P. Das, D. K. Ferry, A. H. Barr

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Place of Publication	Amsterdam, Neth
Publisher	North-Holland Publ Co
Pages	147-155
Number of pages	9
State	Published - 1978
Externally published	Yes
Event	Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd - Berchtesgaden, Ger Duration: Aug 19 1977 → Aug 22 1977

Other

Other	Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd
City	Berchtesgaden, Ger
Period	8/19/77 → 8/22/77

ASJC Scopus subject areas

Engineering(all)

Cite this

@inbook{62e3a7fba7cc4148bce40c3e3d5aea64,

title = "TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.",

abstract = "Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.",

author = "P. Das and Ferry, {D. K.} and Barr, {A. H.}",

year = "1978",

language = "English (US)",

pages = "147--155",

booktitle = "Unknown Host Publication Title",

publisher = "North-Holland Publ Co",

note = "Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd ; Conference date: 19-08-1977 Through 22-08-1977",

}

TY - CHAP

T1 - TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.

AU - Das, P.

AU - Ferry, D. K.

AU - Barr, A. H.

PY - 1978

Y1 - 1978

N2 - Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.

AB - Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.

UR - http://www.scopus.com/inward/record.url?scp=0018047790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018047790&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0018047790

SP - 147

EP - 155

BT - Unknown Host Publication Title

PB - North-Holland Publ Co

CY - Amsterdam, Neth

T2 - Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd

Y2 - 19 August 1977 through 22 August 1977

ER -

TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.

Abstract

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ASJC Scopus subject areas

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