H. L. Grubin, D. K. Ferry, J. R. Barker, M. A. Littlejohn, T. H. Glisson, J. R. Hauser

Research output: Chapter in Book/Report/Conference proceedingChapter


The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.

Original languageEnglish (US)
Title of host publicationProceedings - Biennial Cornell Electrical Engineering Conference
Place of PublicationIthaca, NY
PublisherCornell Univ Sch of Electr Eng (v 7)
Number of pages10
StatePublished - 1979
Externally publishedYes
EventProc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits - Ithaca, NY, USA
Duration: Aug 14 1979Aug 16 1979


OtherProc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits
CityIthaca, NY, USA

ASJC Scopus subject areas

  • General Engineering


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