Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells

P. Dandamudi; Hugh Barnaby; Michael Kozicki; Yago Gonzalez Velo; Keith Holbert

doi:10.1109/RADECS.2013.6937426

Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells

P. Dandamudi, Hugh Barnaby, Michael Kozicki, Yago Gonzalez Velo, Keith Holbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge₄₀S₆₀ based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge₄₀S₆₀) using ⁶⁰Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.

Original language	English (US)
Title of host publication	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467350570
DOIs	https://doi.org/10.1109/RADECS.2013.6937426
State	Published - Oct 28 2013
Event	2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 - Oxford, United Kingdom Duration: Sep 23 2013 → Sep 27 2013

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other	2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013
Country/Territory	United Kingdom
City	Oxford
Period	9/23/13 → 9/27/13

Keywords

ReRAM
chalcogenide glass
programmable metallization cells
radiation hardening
total ionizing dose

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2013.6937426

Cite this

Dandamudi, P., Barnaby, H., Kozicki, M., Gonzalez Velo, Y., & Holbert, K. (2013). Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS Article 6937426 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2013.6937426

Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells. / Dandamudi, P.; Barnaby, Hugh ; Kozicki, Michael et al.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc., 2013. 6937426 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dandamudi, P, Barnaby, H , Kozicki, M, Gonzalez Velo, Y & Holbert, K 2013, Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells. in Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS., 6937426, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, Institute of Electrical and Electronics Engineers Inc., 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013, Oxford, United Kingdom, 9/23/13. https://doi.org/10.1109/RADECS.2013.6937426

Dandamudi P, Barnaby H , Kozicki M, Gonzalez Velo Y, Holbert K. Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc. 2013. 6937426. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2013.6937426

Dandamudi, P. ; Barnaby, Hugh ; Kozicki, Michael et al. / Total ionizing dose tolerance of the resistance switching of Ag-Ge₄₀S₆₀ based programmable metallization cells. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc., 2013. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

@inproceedings{57583abaa4b6491293410bf10b837ca2,

title = "Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells",

abstract = "Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.",

keywords = "ReRAM, chalcogenide glass, programmable metallization cells, radiation hardening, total ionizing dose",

author = "P. Dandamudi and Hugh Barnaby and Michael Kozicki and {Gonzalez Velo}, Yago and Keith Holbert",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 ; Conference date: 23-09-2013 Through 27-09-2013",

year = "2013",

month = oct,

day = "28",

doi = "10.1109/RADECS.2013.6937426",

language = "English (US)",

series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

}

TY - GEN

T1 - Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells

AU - Dandamudi, P.

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Gonzalez Velo, Yago

AU - Holbert, Keith

PY - 2013/10/28

Y1 - 2013/10/28

N2 - Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.

AB - Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.

KW - ReRAM

KW - chalcogenide glass

KW - programmable metallization cells

KW - radiation hardening

KW - total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=84949924332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949924332&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2013.6937426

DO - 10.1109/RADECS.2013.6937426

M3 - Conference contribution

AN - SCOPUS:84949924332

T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

BT - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013

Y2 - 23 September 2013 through 27 September 2013

ER -