@inproceedings{d937b1f4a2ba4eb491d57a51038ac7ad,
title = "Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology",
abstract = "Experimental results showing the response of 22nm fully depleted silicon-on-insulator (FD-SOI) devices are presented. Gate voltage shift at a constant drain current is extracted and compared across all similar devices of varying width.",
keywords = "22nm, FD-SOI, TID, drain current, gate voltage shift, radiation effects",
author = "Jose Solano and Matthew Spear and Trace Wallace and Donald Wilson and Oliver Forman and Esqueda, \{Ivan Sanchez\} and Hugh Barnaby and Aymeric Privat and Marek Turowski and Rudolf Vonniederhausern",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Radiation Effects Data Workshop, REDW 2022 ; Conference date: 18-07-2022 Through 22-07-2022",
year = "2022",
doi = "10.1109/REDW56037.2022.9921673",
language = "English (US)",
series = "IEEE Radiation Effects Data Workshop",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings",
}