Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform

Patrick S. Goley, George N. Tzintzarov, Saeed Zeinolabedinzadeh, Adrian Ildefonso, Keisuke Motoki, Rong Jiang, En Xia Zhang, Daniel M. Fleetwood, Lars Zimmermann, Mehmet Kaynak, Stefan Lischke, Christian Mai, John D. Cressler

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to ionizing radiation from a 10-keV X-ray source to investigate total ionizing dose effects. Existing work on radiation effects in PDs, which is almost entirely based on normal-incidence PDs (rather than WG-integrated PDs), is reviewed to provide context and a framework for understanding the measurement results. Back-end-of-line considerations suggest the enhancement of the ionizing dose due to high-Z materials near the PD. PD performance was characterized in terms of dark current, S-parameters, dc photocurrent response, and optical-to-electrical conversion frequency response, shortly before and after irradiation. No significant degradation was observed, indicating that these devices may be suitable for applications in harsh radiation environments.

Original languageEnglish (US)
Article number8565943
Pages (from-to)125-133
Number of pages9
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2019
Externally publishedYes


  • Integrated photonics
  • optoelectronic devices
  • photodiodes (PDs)
  • radiation effects
  • silicon (Si) photonics
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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