Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells

Attachai Ueranantasun; Bryce S. Richards; Christiana B. Honsberg; Jeffrey E. Cotter

Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells

Attachai Ueranantasun
, Bryce S. Richards
, Christiana B. Honsberg
, Jeffrey E. Cotter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The application of titanium dioxide (TiO₂) films as a phosphorus diffusion barrier is investigated. The purpose is to study the possibility of using TiO₂ to replace thermally grown silicon dioxide (SiO ₂) as a phosphorus diffusion barrier to allow the formation of a selective emitter in the buried contact (BC) solar cell processing. The TiO ₂ films are deposited on silicon wafers at 450°C before phosphorus (POCl₃) diffusion. The result shows that TiO₂ is a potential diffusion barrier, as the resistivity under the masked regions is as high as 800 Omega;?/sq. However, the scanning electron microscopic (SEM) images reveal that there is a significant change in surface morphology of the films when phosphorus is involved in the process. This morphology change compared to other sintering gases is also discussed.

Original language	English (US)
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1411-1414
Number of pages	4
State	Published - Dec 1 2003
Externally published	Yes
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: May 11 2003 → May 18 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Other

Other	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	5/11/03 → 5/18/03

ASJC Scopus subject areas

General Engineering

Cite this

Ueranantasun, A., Richards, B. S., Honsberg, C. B., & Cotter, J. E. (2003). Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1411-1414). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. / Ueranantasun, Attachai; Richards, Bryce S.; Honsberg, Christiana B. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1411-1414 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueranantasun, A, Richards, BS, Honsberg, CB & Cotter, JE 2003, Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1411-1414, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 5/11/03.

Ueranantasun A, Richards BS, Honsberg CB, Cotter JE. Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 1411-1414. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Ueranantasun, Attachai ; Richards, Bryce S. ; Honsberg, Christiana B. et al. / Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 1411-1414 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{484e7d0f490e45b4a2f85fd0d805b58d,

title = "Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells",

abstract = "The application of titanium dioxide (TiO2) films as a phosphorus diffusion barrier is investigated. The purpose is to study the possibility of using TiO2 to replace thermally grown silicon dioxide (SiO 2) as a phosphorus diffusion barrier to allow the formation of a selective emitter in the buried contact (BC) solar cell processing. The TiO 2 films are deposited on silicon wafers at 450°C before phosphorus (POCl3) diffusion. The result shows that TiO2 is a potential diffusion barrier, as the resistivity under the masked regions is as high as 800 Omega;?/sq. However, the scanning electron microscopic (SEM) images reveal that there is a significant change in surface morphology of the films when phosphorus is involved in the process. This morphology change compared to other sintering gases is also discussed.",

author = "Attachai Ueranantasun and Richards, \{Bryce S.\} and Honsberg, \{Christiana B.\} and Cotter, \{Jeffrey E.\}",

year = "2003",

month = dec,

day = "1",

language = "English (US)",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1411--1414",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

TY - GEN

T1 - Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells

AU - Ueranantasun, Attachai

AU - Richards, Bryce S.

AU - Honsberg, Christiana B.

AU - Cotter, Jeffrey E.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The application of titanium dioxide (TiO2) films as a phosphorus diffusion barrier is investigated. The purpose is to study the possibility of using TiO2 to replace thermally grown silicon dioxide (SiO 2) as a phosphorus diffusion barrier to allow the formation of a selective emitter in the buried contact (BC) solar cell processing. The TiO 2 films are deposited on silicon wafers at 450°C before phosphorus (POCl3) diffusion. The result shows that TiO2 is a potential diffusion barrier, as the resistivity under the masked regions is as high as 800 Omega;?/sq. However, the scanning electron microscopic (SEM) images reveal that there is a significant change in surface morphology of the films when phosphorus is involved in the process. This morphology change compared to other sintering gases is also discussed.

AB - The application of titanium dioxide (TiO2) films as a phosphorus diffusion barrier is investigated. The purpose is to study the possibility of using TiO2 to replace thermally grown silicon dioxide (SiO 2) as a phosphorus diffusion barrier to allow the formation of a selective emitter in the buried contact (BC) solar cell processing. The TiO 2 films are deposited on silicon wafers at 450°C before phosphorus (POCl3) diffusion. The result shows that TiO2 is a potential diffusion barrier, as the resistivity under the masked regions is as high as 800 Omega;?/sq. However, the scanning electron microscopic (SEM) images reveal that there is a significant change in surface morphology of the films when phosphorus is involved in the process. This morphology change compared to other sintering gases is also discussed.

UR - https://www.scopus.com/pages/publications/6344282942

UR - https://www.scopus.com/pages/publications/6344282942#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:6344282942

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1411

EP - 1414

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this