Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

Kong-Thon Tsen; R. P. Joshi; D. K. Ferry; H. Morkoc

doi:10.1103/PhysRevB.39.1446

Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

Kong-Thon Tsen, R. P. Joshi, D. K. Ferry, H. Morkoc

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46 Scopus citations

Abstract

Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 81 ps at T 10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.

Original language	English (US)
Pages (from-to)	1446-1449
Number of pages	4
Journal	Physical Review B
Volume	39
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.39.1446
State	Published - 1989

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.39.1446

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@article{d6df58842ef740828444f28e70e85ea7,

title = "Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells",

abstract = "Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 81 ps at T 10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.",

author = "Kong-Thon Tsen and Joshi, {R. P.} and Ferry, {D. K.} and H. Morkoc",

year = "1989",

doi = "10.1103/PhysRevB.39.1446",

language = "English (US)",

volume = "39",

pages = "1446--1449",

journal = "Physical Review B",

issn = "0163-1829",

number = "2",

}

TY - JOUR

T1 - Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

AU - Tsen, Kong-Thon

AU - Joshi, R. P.

AU - Ferry, D. K.

AU - Morkoc, H.

PY - 1989

Y1 - 1989

N2 - Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 81 ps at T 10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.

AB - Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 81 ps at T 10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.

UR - http://www.scopus.com/inward/record.url?scp=0001094552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001094552&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.39.1446

DO - 10.1103/PhysRevB.39.1446

M3 - Article

AN - SCOPUS:0001094552

SN - 0163-1829

VL - 39

SP - 1446

EP - 1449

JO - Physical Review B

JF - Physical Review B

IS - 2

ER -

Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

Abstract

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