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TID Response of an Analog In-Memory Neural Network Accelerator

  • B. Tolleson
  • , C. Bennett
  • , T. Patrick Xiao
  • , D. Wilson
  • , J. Short
  • , J. Kim
  • , D. R. Hughart
  • , N. Gilbert
  • , S. Agarwal
  • , H. J. Barnaby
  • , M. J. Marinella

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A vector-matrix multiply (VMM) characterization chip was designed and fabricated in 350nm CMOS, including pulsers and a 10-bit analog to digital converter. The response of total ionizing dose (TID) was assessed using gamma radiation from a Cobalt-60 source. Inference was performed in situ during irradiation and VMMs computed by the accelerator were measured at increasing TID levels. Experimental results were used to create a circuit model, which was enabled a neural network accuracy simulation with CrossSim. Accuracy degradation on the CIFAR-10 task was a function of network architecture and was significantly reduced following >150 krad exposure.

Original languageEnglish (US)
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: Mar 26 2023Mar 30 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period3/26/233/30/23

ASJC Scopus subject areas

  • General Engineering

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