TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Lin Zhou, C. Y. Chang, S. J. Pearton, F. Ren, Amir Dabiran, David Smith

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The morphology of ultrathin AlN/GaN high electron mobility transistors without or with TiAlNiAu Ohmic contacts, and annealed from 750 to 950 °C, has been investigated using transmission electron microscopy and associated analytical techniques. After annealing, the contact surface roughness was degraded due to intermixing and phase separation of the metal layers. TiN contact inclusions (CIs) that had penetrated through the AlN layers into the underlying GaN layers along threading dislocations, were observed in all annealed samples. The CI density increased with increasing annealing temperature but the lowest specific contact resistivity was obtained for structures annealed at 850 °C. Annealing at 950 °C caused cracking on the contact metal surface. The AlN layers remained intact in dislocation-free areas of all samples. The relationship between annealing temperature, interfacial structure and contact resistance is also discussed.

Original languageEnglish (US)
Article number084513
JournalJournal of Applied Physics
Issue number8
StatePublished - Oct 15 2010

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures'. Together they form a unique fingerprint.

Cite this