Abstract
A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1053-1057 |
| Number of pages | 5 |
| Journal | Journal of the Society for Information Display |
| Volume | 14 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2006 |
Keywords
- Amorphous silicon
- Circuit aging
- Thin-film transistor
- Threshold-voltage shift
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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