Threshold-voltage recovery of a-Si:H digital circuits

Sameer M. Venugopal; David Allee; Zi Li; Lawrence T. Clark

doi:10.1889/1.2393030

Threshold-voltage recovery of a-Si:H digital circuits

Sameer M. Venugopal, David Allee, Zi Li, Lawrence T. Clark

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.

Original language	English (US)
Pages (from-to)	1053-1057
Number of pages	5
Journal	Journal of the Society for Information Display
Volume	14
Issue number	11
DOIs	https://doi.org/10.1889/1.2393030
State	Published - Nov 1 2006

Keywords

Amorphous silicon
Circuit aging
Thin-film transistor
Threshold-voltage shift

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1889/1.2393030

Cite this

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title = "Threshold-voltage recovery of a-Si:H digital circuits",

abstract = "A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.",

keywords = "Amorphous silicon, Circuit aging, Thin-film transistor, Threshold-voltage shift",

author = "Venugopal, {Sameer M.} and David Allee and Zi Li and Clark, {Lawrence T.}",

year = "2006",

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T1 - Threshold-voltage recovery of a-Si:H digital circuits

AU - Venugopal, Sameer M.

AU - Allee, David

AU - Li, Zi

AU - Clark, Lawrence T.

PY - 2006/11/1

Y1 - 2006/11/1

N2 - A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.

AB - A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.

KW - Amorphous silicon

KW - Circuit aging

KW - Thin-film transistor

KW - Threshold-voltage shift

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Threshold-voltage recovery of a-Si:H digital circuits

Abstract

Keywords

ASJC Scopus subject areas

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