Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

Advait Gilankar; Ahmad Ehteshamul Islam; Martha R. McCartney; Abishek Katta; Nabasindhu Das; David J. Smith; Nidhin Kurian Kalarickal

doi:10.35848/1882-0786/ad36ab

Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

Advait Gilankar, Ahmad Ehteshamul Islam, Martha R. McCartney, Abishek Katta, Nabasindhu Das, David J. Smith, Nidhin Kurian Kalarickal

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga₂O₃ Schottky barrier diodes (SBDs) and NiO/β-Ga₂O₃ heterojunction diodes (HJDs) is reported. The fabricated devices showed a low R _on,sp of 6.2 mΩ cm² for SBDs and 6.8 mΩ cm² for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm². The devices also showed low reverse leakage current (<1 mA cm⁻²) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-class β-Ga₂O₃ diodes.

Original language	English (US)
Article number	046501
Journal	Applied Physics Express
Volume	17
Issue number	4
DOIs	https://doi.org/10.35848/1882-0786/ad36ab
State	Published - Apr 1 2024

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown",

abstract = "A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 Schottky barrier diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low R on,sp of 6.2 mΩ cm2 for SBDs and 6.8 mΩ cm2 for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-class β-Ga2O3 diodes.",

author = "Advait Gilankar and Islam, {Ahmad Ehteshamul} and McCartney, {Martha R.} and Abishek Katta and Nabasindhu Das and Smith, {David J.} and Kalarickal, {Nidhin Kurian}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd",

year = "2024",

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doi = "10.35848/1882-0786/ad36ab",

language = "English (US)",

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T1 - Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

AU - Gilankar, Advait

AU - Islam, Ahmad Ehteshamul

AU - McCartney, Martha R.

AU - Katta, Abishek

AU - Das, Nabasindhu

AU - Smith, David J.

AU - Kalarickal, Nidhin Kurian

PY - 2024/4/1

Y1 - 2024/4/1

N2 - A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 Schottky barrier diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low R on,sp of 6.2 mΩ cm2 for SBDs and 6.8 mΩ cm2 for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-class β-Ga2O3 diodes.

AB - A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 Schottky barrier diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low R on,sp of 6.2 mΩ cm2 for SBDs and 6.8 mΩ cm2 for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-class β-Ga2O3 diodes.

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Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

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