Thin films of CoSi 2 co-deposited onto Si 1-xGe x alloys

Peter T. Goeller, Boyan I. Boyanov, Dale E. Sayers, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Cobalt disilicide films have been formed on strained epitaxial Si 0.80Ge 0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500-700 °C are indeed crystalline CoSi 2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the CoSi 2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi 2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi 2/substrate interface will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.C. Cammarata, E.H. Chason, T.L. Einstein, E.D. Williams
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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