Thermal transport in tantalum oxide films for memristive applications

Colin D. Landon; Rudeger H.T. Wilke; Michael T. Brumbach; Geoff L. Brennecka; Mia Blea-Kirby; Jon F. Ihlefeld; Matthew J. Marinella; Thomas E. Beechem

doi:10.1063/1.4926921

Thermal transport in tantalum oxide films for memristive applications

Colin D. Landon
, Rudeger H.T. Wilke
, Michael T. Brumbach
, Geoff L. Brennecka
, Mia Blea-Kirby
, Jon F. Ihlefeld
, Matthew J. Marinella
, Thomas E. Beechem

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The thermal conductivity of amorphous TaO_x memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO_x switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

Original language	English (US)
Article number	023108
Journal	Applied Physics Letters
Volume	107
Issue number	2
DOIs	https://doi.org/10.1063/1.4926921
State	Published - Jul 13 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4926921

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title = "Thermal transport in tantalum oxide films for memristive applications",

abstract = "The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.",

author = "Landon, \{Colin D.\} and Wilke, \{Rudeger H.T.\} and Brumbach, \{Michael T.\} and Brennecka, \{Geoff L.\} and Mia Blea-Kirby and Ihlefeld, \{Jon F.\} and Marinella, \{Matthew J.\} and Beechem, \{Thomas E.\}",

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doi = "10.1063/1.4926921",

language = "English (US)",

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T1 - Thermal transport in tantalum oxide films for memristive applications

AU - Landon, Colin D.

AU - Wilke, Rudeger H.T.

AU - Brumbach, Michael T.

AU - Brennecka, Geoff L.

AU - Blea-Kirby, Mia

AU - Ihlefeld, Jon F.

AU - Marinella, Matthew J.

AU - Beechem, Thomas E.

PY - 2015/7/13

Y1 - 2015/7/13

N2 - The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

AB - The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

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U2 - 10.1063/1.4926921

DO - 10.1063/1.4926921

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VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

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ER -

Thermal transport in tantalum oxide films for memristive applications

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