Thermal stability of copper on Te-Ti thin films

Benjamin Roos; Sayantan Das; Terry Alford

doi:10.1016/j.matlet.2013.09.083

Thermal stability of copper on Te-Ti thin films

Benjamin Roos, Sayantan Das, Terry Alford

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te_0.20Ti_0.70O_0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

Original language	English (US)
Pages (from-to)	100-102
Number of pages	3
Journal	Materials Letters
Volume	113
DOIs	https://doi.org/10.1016/j.matlet.2013.09.083
State	Published - Oct 16 2013

Keywords

Chalcogenide
Diffusion barrier
Thin films

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Thermal stability of copper on Te-Ti thin films",

abstract = "In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.",

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author = "Benjamin Roos and Sayantan Das and Terry Alford",

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language = "English (US)",

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journal = "Materials Letters",

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TY - JOUR

T1 - Thermal stability of copper on Te-Ti thin films

AU - Roos, Benjamin

AU - Das, Sayantan

AU - Alford, Terry

PY - 2013/10/16

Y1 - 2013/10/16

N2 - In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

AB - In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

KW - Chalcogenide

KW - Diffusion barrier

KW - Thin films

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JO - Materials Letters

JF - Materials Letters

ER -

Thermal stability of copper on Te-Ti thin films

Abstract

Keywords

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