Thermal Effects in Fully-Depleted SOI Devices

Ziyi Wang; Dragica Vasileska; Caroline S. Soares; Gilson Wirth; Jairo Mendez Villanueva; Marcelo A. Pavanello; Michael Povolotskyi

doi:10.1109/LAEDC58183.2023.10209114

Thermal Effects in Fully-Depleted SOI Devices

Ziyi Wang, Dragica Vasileska, Caroline S. Soares, Gilson Wirth, Jairo Mendez Villanueva, Marcelo A. Pavanello, Michael Povolotskyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Recently, excellent characteristics were reported for Fully-Depleted (FD) SOI devices operated under cryogenic temperatures. It was also observed that self-heating effects (SHE) play a crucial role to the FD SOI device operation. The goal of this work is to examine the role of the self-heating effects in 28 nm technology node FD SOI devices operated down to 78K and compare our simulation results with available experimental data. Simulation results confirm experimental findings that the temperature increase in the active channel region of the device is more significant at low temperatures.

Original language	English (US)
Title of host publication	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350311907
DOIs	https://doi.org/10.1109/LAEDC58183.2023.10209114
State	Published - 2023
Event	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 - Puebla, Mexico Duration: Jul 3 2023 → Jul 5 2023

Publication series

Name	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023

Conference

Conference	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Country/Territory	Mexico
City	Puebla
Period	7/3/23 → 7/5/23

Keywords

Cryogenic Temperatures
FD SOI Devices
Monte Carlo Device Simulator
Self-heating

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LAEDC58183.2023.10209114

Cite this

Wang, Z., Vasileska, D., Soares, C. S., Wirth, G., Villanueva, J. M., Pavanello, M. A., & Povolotskyi, M. (2023). Thermal Effects in Fully-Depleted SOI Devices. In 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 (2023 IEEE Latin American Electron Devices Conference, LAEDC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LAEDC58183.2023.10209114

Thermal Effects in Fully-Depleted SOI Devices. / Wang, Ziyi; Vasileska, Dragica; Soares, Caroline S. et al.
2023 IEEE Latin American Electron Devices Conference, LAEDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE Latin American Electron Devices Conference, LAEDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, Z, Vasileska, D, Soares, CS, Wirth, G, Villanueva, JM, Pavanello, MA & Povolotskyi, M 2023, Thermal Effects in Fully-Depleted SOI Devices. in 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023. 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023, Puebla, Mexico, 7/3/23. https://doi.org/10.1109/LAEDC58183.2023.10209114

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title = "Thermal Effects in Fully-Depleted SOI Devices",

abstract = "Recently, excellent characteristics were reported for Fully-Depleted (FD) SOI devices operated under cryogenic temperatures. It was also observed that self-heating effects (SHE) play a crucial role to the FD SOI device operation. The goal of this work is to examine the role of the self-heating effects in 28 nm technology node FD SOI devices operated down to 78K and compare our simulation results with available experimental data. Simulation results confirm experimental findings that the temperature increase in the active channel region of the device is more significant at low temperatures.",

keywords = "Cryogenic Temperatures, FD SOI Devices, Monte Carlo Device Simulator, Self-heating",

author = "Ziyi Wang and Dragica Vasileska and Soares, {Caroline S.} and Gilson Wirth and Villanueva, {Jairo Mendez} and Pavanello, {Marcelo A.} and Michael Povolotskyi",

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AU - Wang, Ziyi

AU - Vasileska, Dragica

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AU - Pavanello, Marcelo A.

AU - Povolotskyi, Michael

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N2 - Recently, excellent characteristics were reported for Fully-Depleted (FD) SOI devices operated under cryogenic temperatures. It was also observed that self-heating effects (SHE) play a crucial role to the FD SOI device operation. The goal of this work is to examine the role of the self-heating effects in 28 nm technology node FD SOI devices operated down to 78K and compare our simulation results with available experimental data. Simulation results confirm experimental findings that the temperature increase in the active channel region of the device is more significant at low temperatures.

AB - Recently, excellent characteristics were reported for Fully-Depleted (FD) SOI devices operated under cryogenic temperatures. It was also observed that self-heating effects (SHE) play a crucial role to the FD SOI device operation. The goal of this work is to examine the role of the self-heating effects in 28 nm technology node FD SOI devices operated down to 78K and compare our simulation results with available experimental data. Simulation results confirm experimental findings that the temperature increase in the active channel region of the device is more significant at low temperatures.

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KW - FD SOI Devices

KW - Monte Carlo Device Simulator

KW - Self-heating

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Thermal Effects in Fully-Depleted SOI Devices

Abstract

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Keywords

ASJC Scopus subject areas

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