Thermal degradation of indium-tin-oxide/p-silicon solar cells

S. M. Goodnick, J. F. Wager, C. W. Wilmsen

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Thermal degradation of indium-tin-oxide (ITO)/p-silicon solar cells has been investigated for cells fabricated on both single and polycrystalline silicon. The primary thermal degradation mechanisms was found to be the growth of SiO2 at the ITO/silicon interface resulting from oxygen diffusion through the ITO and not decomposition of the ITO. The degradation rate appears to be limited by surface reaction controlled oxidation since this rate is independent of ITO thickness. The polycrystalline cells were observed to degrade somewhat faster than the single-crystalline cells. The projected cell life at 50 °C due to thermal failure mechanisms exceeds 105 years for both single-crystal and polycrystalline cells.

Original languageEnglish (US)
Pages (from-to)527-531
Number of pages5
JournalJournal of Applied Physics
Issue number1
StatePublished - 1980
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Thermal degradation of indium-tin-oxide/p-silicon solar cells'. Together they form a unique fingerprint.

Cite this