The use of electron-beam lithography for localized micro-beam irradiations

Y. Gonzalez-Velo, J. Boch, F. Pichot, J. Mekki, N. J.H. Roche, S. Pérez, C. Deneau, J. R. Vaille, L. Dusseau, F. Saigné, E. Lorfèvre, R. D. Schrimpf

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided

Original languageEnglish (US)
Article number5755135
Pages (from-to)1104-1111
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 2
StatePublished - Jun 2011
Externally publishedYes


  • Bipolar microcircuit
  • circuit-effect
  • compensation
  • dose
  • electron-beam lithography
  • localized irradiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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