@article{b689e9b7cd504c35927848de8b6ffe55,
title = "The use of a dose-rate switching technique to characterize bipolar devices",
abstract = "The enhanced radiation sensitivity exhibited at low dose rate by many bipolar devices remains one of the main concerns for spacecraft reliability. As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.",
keywords = "Accelerated test method, Dose rate, Integrated circuits, Switching experiments, Total dose",
author = "J{\'e}r{\^o}me Boch and Velo, {Yago Gonzalez} and Fr{\'e}d{\'e}ric Saign{\'e} and Roche, {Nicolas J.H.} and Schrimpf, {Ronald D.} and Vaill{\'e}, {Jean Roch} and Laurent Dusseau and Christian Chatry and Eric Lorf{\`e}vre and Robert Ecoffet and Touboul, {Antoine D.}",
note = "Funding Information: Manuscript received July 15, 2009; revised September 13, 2009. Current version published December 09, 2009. This work was supported by the Agence Nationale de la Recherche (ANR-07-JCJC-0152). J. Boch, Y. Gonzalez Velo, F. Saign{\'e}, N. J.-H. Roche, J.-R. Vaill{\'e}, L. Dusseau, and A. D. Touboul are with the Universit{\'e} Montpellier 2, IES-UMR UM2/CNRS 5214, F-34095 Montpellier cedex 5, France (e-mail: boch@ies.univ-montp2.fr). R. D. Schrimpf is with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA. C. Chatry is with the Tests et Radiations, TRAD, F-31674 Lab{\`e}ge cedex, France. E. Lorf{\`e}vre and R. Ecoffet are with the Centre National d{\textquoteright}Etude Spatiale, F-31401 Toulouse cedex 9, France. Digital Object Identifier 10.1109/TNS.2009.2033686 Fig. 1. Experimental results (degradation of the base current) on NPN and PNP transistors irradiated at 20 and (from [12]). The inverse S-shaped curve is obtained for both NPN and PNP devices. In both curves, the grey highlight regions correspond to test standards specifications.",
year = "2009",
month = dec,
doi = "10.1109/TNS.2009.2033686",
language = "English (US)",
volume = "56",
pages = "3347--3353",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}