@inproceedings{c165ac6e86fd4c64b8af38a80b6de696,
title = "The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator",
abstract = "This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.",
keywords = "FBAR, dosimeter, ionizing radiation, resonator",
author = "J. Oiler and X. Qiu and J. Zhu and R. Tang and Chen, {S. J.} and H. Huang and Keith Holbert and Hugh Barnaby and H. Yu",
year = "2011",
month = sep,
day = "1",
doi = "10.1109/TRANSDUCERS.2011.5969221",
language = "English (US)",
isbn = "9781457701573",
series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",
pages = "2058--2061",
booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",
note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",
}