The observation of amorphous materials at high voltage and high resolution

David J. Smith, W. O. Saxton, J. R.A. Cleaver, C. J.D. Catto

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Thin films of amorphous carbon, silicon and germanium have been examined at high resolution at accelerating voltages up to 575 kV with the Cambridge University high resolution electron microscope. The directly interpretable resolution has been demonstrated to extend to 0ṁ22 nm, so that the microscope is capable of providing unambiguous structural information at the atomic level. The observations of both carbon and silicon were, however, somewhat disappointing in that no significant specimen detail was revealed despite the improved performance compared with that of conventional 100 kV instruments. Some of the factors involved in observation and interpretation of these images are discussed. 1980 Blackwell Science Ltd

Original languageEnglish (US)
Pages (from-to)19-28
Number of pages10
JournalJournal of Microscopy
Issue number1
StatePublished - May 1980
Externally publishedYes

ASJC Scopus subject areas

  • Pathology and Forensic Medicine
  • Histology


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