The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0)

N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, Robert Culbertson, David Smith, V. Atluri, P. Zimmerman, K. T. Queeney

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26 Scopus citations


Ordering is observed at SiO2/Si(1 0 0) interfaces when 2-40 nm thick SiO2 films are grown on passivated, ordered (1 × 1) Si(1 0 0) surfaces produced by a novel wet chemical cleaning. A mechanism is proposed for the occurrence of this ordering. The thin oxides are grown by a variety of conventional oxidation techniques or by rapid thermal oxidation between 750 and 1100°C. The evolution of oxygen, carbon, hydrogen and silicon coverages are detected by ion beam analysis (IBA) using a combination of ion channeling, nuclear resonance, elastic recoil detection and time-of-flight secondary ion mass spectrometry. IBA detects Si surface peak areal densities lower than that of a disorder-free, bulk-terminated (1×1) Si(100) crystal calculated by Monte-Carlo methods. This result indicates that Si substrate atoms are shadowed by Si atoms located in a 2 nm ordered region on the oxide side of the interface. Beyond 2 nm, the oxide becomes amorphous. Reflection high-energy electron diffraction (RHEED) at 10 keV confirms the presence of order: a (1 × 1) streaky pattern commensurate with Si(1 0 0) is observed instead of an amorphous surface. Infrared (IR) spectroscopy shows that the ordered SiO2/Si(100) interfaces exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial oxide region near Si. This is in contrast to a rapidly changing frequency found for conventional oxides in the same region. Thus, IR supports the presence of a well-defined bond-length and stoichiometry as detected by IBA and RHEED.

Original languageEnglish (US)
Pages (from-to)303-316
Number of pages14
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number3
StatePublished - Dec 19 2001


  • Amorphous surface
  • Crystalline interfaces
  • Ion beam analysis
  • Ion channeling
  • Nuclear resonance
  • SiO/Si (100)
  • Silicon oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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