The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits

Ronald L. Pease; Philippe Claude Adell; Bernard G. Rax; Xiao Jie Chen; Hugh Barnaby; Keith Holbert; Harold P. Hjalmarson

doi:10.1109/TNS.2008.2006478

The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits

Ronald L. Pease, Philippe Claude Adell, Bernard G. Rax, Xiao Jie Chen, Hugh Barnaby, Keith Holbert, Harold P. Hjalmarson

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).

Original language	English (US)
Article number	4723793
Pages (from-to)	3169-3173
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	55
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2008.2006478
State	Published - Dec 2008

Keywords

Dose rate
Enhanced low-dose rate sensitivity
Hydrogen
Interface traps
Radiation effects
Total ionizing dose
Voltage comparator

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2008.2006478

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title = "The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits",

abstract = "It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).",

keywords = "Dose rate, Enhanced low-dose rate sensitivity, Hydrogen, Interface traps, Radiation effects, Total ionizing dose, Voltage comparator",

author = "Pease, {Ronald L.} and Adell, {Philippe Claude} and Rax, {Bernard G.} and Chen, {Xiao Jie} and Hugh Barnaby and Keith Holbert and Hjalmarson, {Harold P.}",

note = "Funding Information: Manuscript received July 11, 2008; revised August 23, 2008. Current version published December 31, 2008. This work was supported in part by the Defense Threat Reduction Agency through Contract N00164-02-D-6599 with NAVSEA Crane and ATK Mission Research and by the NASA Electronic Parts Program. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lock-heed Martin Company, for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract DE-AC04-94AL85000.",

year = "2008",

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language = "English (US)",

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pages = "3169--3173",

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AU - Pease, Ronald L.

AU - Adell, Philippe Claude

AU - Rax, Bernard G.

AU - Chen, Xiao Jie

AU - Barnaby, Hugh

AU - Holbert, Keith

AU - Hjalmarson, Harold P.

N1 - Funding Information: Manuscript received July 11, 2008; revised August 23, 2008. Current version published December 31, 2008. This work was supported in part by the Defense Threat Reduction Agency through Contract N00164-02-D-6599 with NAVSEA Crane and ATK Mission Research and by the NASA Electronic Parts Program. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lock-heed Martin Company, for the United States Department of Energy’s National Nuclear Security Administration under Contract DE-AC04-94AL85000.

PY - 2008/12

Y1 - 2008/12

N2 - It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).

AB - It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).

KW - Dose rate

KW - Enhanced low-dose rate sensitivity

KW - Hydrogen

KW - Interface traps

KW - Radiation effects

KW - Total ionizing dose

KW - Voltage comparator

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The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits

Abstract

Keywords

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