The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits

Ronald L. Pease; Dale G. Platteter; Gary W. Dunham; John E. Seiler; Philippe C. Adell; Hugh Barnaby; Jie Chen

doi:10.1109/TNS.2007.907870

The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits

Ronald L. Pease
, Dale G. Platteter
, Gary W. Dunham
, John E. Seiler
, Philippe C. Adell
, Hugh Barnaby
, Jie Chen

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.

Original language	English (US)
Pages (from-to)	2168-2173
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2007.907870
State	Published - Dec 2007

Keywords

Dose rate
Enhanced low-dose-rate sensitivity
Hydrogen
Interface traps
Radiation effects
Temperature transducer
Total ionizing dose
Voltage comparator

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2007.907870

Cite this

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title = "The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits",

abstract = "It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100\% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.",

keywords = "Dose rate, Enhanced low-dose-rate sensitivity, Hydrogen, Interface traps, Radiation effects, Temperature transducer, Total ionizing dose, Voltage comparator",

author = "Pease, \{Ronald L.\} and Platteter, \{Dale G.\} and Dunham, \{Gary W.\} and Seiler, \{John E.\} and Adell, \{Philippe C.\} and Hugh Barnaby and Jie Chen",

note = "Funding Information: Manuscript received July 18, 2007; revised August 29, 2007. This work was sponsored by the Defense Threat Reduction Agency through Contract N00164-02-D-6599 with NAVSEA Crane and ATK Mission Research and by the NASA Electronic Parts Program. R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA (e-mail: [email protected]). D. G. Platteter, retired, was with NAVSEA Crane, Crane, IN 47522 USA. He now resides in Bedford, IN 47421 USA. G. W. Dunham and J. E. Seiler are with NAVSEA Crane, Crane, IN 47522 USA (e-mail: [email protected]; [email protected]). P. C. Adell is with the Jet Propulsion Laboratory, Pasadena, CA 91109 USA (e-mail: [email protected]). H. J. Barnaby and J. Chen are with Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected]; [email protected]). Digital Object Identifier 10.1109/TNS.2007.907870",

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AU - Pease, Ronald L.

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AU - Dunham, Gary W.

AU - Seiler, John E.

AU - Adell, Philippe C.

AU - Barnaby, Hugh

AU - Chen, Jie

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KW - Dose rate

KW - Enhanced low-dose-rate sensitivity

KW - Hydrogen

KW - Interface traps

KW - Radiation effects

KW - Temperature transducer

KW - Total ionizing dose

KW - Voltage comparator

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The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits

Abstract

Keywords

ASJC Scopus subject areas

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