The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells

H. L. Cotal, Richard King, M. Haddad, J. H. Ermer, N. H. Karam, D. D. Krut, D. E. Joslin, M. Takahashi, B. T. Cavicchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations


Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780357728
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering


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