@article{b1962b917ac84ce1ae2f6f3a3b02962a,
title = "The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors",
abstract = "Complex interplay between hydrogen-related defect formation and passivation is observed in irradiated bipolar transistors. Hydrogen soaking experiments are performed to evaluate the dependence of defect buildup and annealing in gated lateral bipolar transistors on hydrogen exposure. Comparisons of the radiation responses of transistors tested in 2009 to identical devices from the same wafer tested in 2003 show that aging has reduced the amount of radiatION-induced interface trap and oxide trapped charge formation in most cases. These results demonstrate that the way in which the radiation response of a hydrogen-sensitive device evolves with age depends on whether hydrogen is diffusing into or out of the device, and whether the initial defect concentration favors passivation or depassivation reactions. These results strongly suggest that hydrogen exposure cannot replace low-dose-rate irradiation in ELDRS tests for bipolar devices and ICs without extensive characterization testing.",
keywords = "Aging, Annealing, Gated lateral bipolar transistor, Hardness assurance, Hydrogen, Interface traps, Oxide trapped charge, Radiation effects",
author = "Hughart, {D. R.} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Chen, {X. Jie} and Hugh Barnaby and Keith Holbert and Pease, {Ronald L.} and Platteter, {Dale G.} and Tuttle, {Blair R.} and Pantelides, {Sokrates T.}",
note = "Funding Information: Manuscript received July 17, 2009; revised September 07, 2009. Current version published December 09, 2009. This work was supported by the Air Force Office of Scientific Research with funding from the MURI program, the NASA Electronic Parts Program, and the Defense Threat Reduction Agency. D. R. Hughart, R. D. Schrimpf, and D. M. Fleetwood are with the Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235 USA (e-mail: david.r.hughart@vanderbilt.edu, ron.schrimpf@vanderbilt.edu, dan.fleetwood@vanderbilt.edu). X. J. Chen is with Radiation Monitoring Devices, Inc., Watertown, MA 02472 USA (e-mail: jchen@rmdinc.com). H. J. Barnaby and K. E. Holbert are with Arizona State University, Tempe, AZ 85287 USA (e-mail: hbarnaby@asu.edu, holbert@asu.edu). R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA (e-mail: rpease@rlpresearch.com). D. G. Platteter is with Platteter Enterprises, Bedford, IN 47421 USA (e-mail: dale.platteter@yahoo.com). B. R. Tuttle and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: brt10@psu. edu, pantelides@vanderbilt.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2009.2034151",
year = "2009",
month = dec,
doi = "10.1109/TNS.2009.2034151",
language = "English (US)",
volume = "56",
pages = "3361--3366",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}