Abstract
Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.
Original language | English (US) |
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Pages (from-to) | 163-168 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
State | Published - Jun 30 2003 |
Keywords
- Agglomeration
- Electronegativity
- Gold
- Oxidation
- Silicon
- Silver
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films