Texture and surface morphology evolution of Ag(Cu) layers on indium tin oxide thin films

Keyphrases

• Atomic Force Microscopy 100%
• Ag-Cu 100%
• Cu Layer 100%
• Indium Tin Oxide Thin Film 100%
• Texture Morphology 100%
• Surface Morphology Evolution 100%
• Surface Energy 66%
• Surface Morphology 66%
• Rutherford Backscattering Spectrometry 66%
• Indium Tin Oxide 66%
• X-ray Diffraction Data 33%
• Thermal Stability 33%
• Contact Material 33%
• Cu Atoms 33%
• X-ray 33%
• High Thermal Stability 33%
• Grain Growth 33%
• MOSFET 33%
• Optical Devices 33%
• Thermal Annealing 33%
• Texture Evolution 33%
• Surface Modification 33%
• Annealing Temperature 33%
• Surface Grain 33%
• Silver Thin Film 33%
• Agglomeration 33%
• Ag Layer 33%
• Ag Metallization 33%
• Annealing Process 33%
• Cu-Ag Alloy 33%
• Electromigration Resistance 33%
• Ag Film 33%
• Grain Boundary Grooving 33%
• Diffraction Force 33%
• Electrical Resistivity Measurement 33%
• Cu Addition 33%
• Texture Stability 33%
• Thermal Annealing Temperature 33%
• Electrical Resistivity Data 33%
• Ag-Cu Films 33%
• Flip-chip Light-emitting Diode 33%
• Crystallographic Texture Evolution 33%
• Energy Boundary 33%
• In Vacuum 33%
• Enhanced Texture 33%
• Cu Alloy Film 33%
• Adatom Mobility 33%

Material Science

• Thin Films 100%
• Indium Tin Oxide 100%
• Surface Morphology 100%
• Atomic Force Microscopy 75%
• X-Ray Diffraction 50%
• Electrical Resistivity 50%
• Film 50%
• Thermal Stability 50%
• Surface Energy 50%
• Rutherford Backscattering Spectrometry 50%
• Annealing Temperature 50%
• Optical Device 25%
• Light-Emitting Diode 25%
• Annealing 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Copper Alloy 25%
• Grain Boundary 25%