Abstract
We study the temperature effects on gain, refractive index, and the linewidth enhancement (or alpha) factor in a 2D semiconductor. We consider both the standard alpha factor due to carrier density variation and that due to temperature variation. The so-called total alpha factor due to both carrier density and temperature is also studied. As a result of temperature change, the alpha factors can be positive, negative, or zero.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 406-410 |
| Number of pages | 5 |
| Volume | 3283 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: Jan 26 1998 → Jan 26 1998 |
Other
| Other | Physics and Simulation of Optoelectronic Devices VI |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 1/26/98 → 1/26/98 |
Keywords
- Linewidth enhancement factor
- Optical gain and refractive index
- Plasma heating
- Semiconductor lasers
- Thermal effects
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics