Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

Michael L. McLain; J. Kyle McDonald; Harold P. Hjalmarson; Jason D. Serrano; Roy P. Cuoco; Don Hanson; David R. Hughart; Matthew J. Marinella; E. Fredrick Hartman

doi:10.1109/RADECS.2017.8696164

Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

Michael L. McLain
, J. Kyle McDonald
, Harold P. Hjalmarson
, Jason D. Serrano
, Roy P. Cuoco
, Don Hanson
, David R. Hughart
, Matthew J. Marinella
, E. Fredrick Hartman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaO_x) memristive bit cells are investigated. The TaO_x devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.

Original language	English (US)
Title of host publication	2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538612613
DOIs	https://doi.org/10.1109/RADECS.2017.8696164
State	Published - Jul 2 2017
Externally published	Yes
Event	17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017 - Geneva, Switzerland Duration: Oct 2 2017 → Oct 6 2017

Publication series

Name	2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

Conference

Conference	17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017
Country/Territory	Switzerland
City	Geneva
Period	10/2/17 → 10/6/17

Keywords

Combined environment
ionizing radiation
memristors
tantalum oxide (TaOx)
temperature effects
total ionizing dose (TID)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Access to Document

10.1109/RADECS.2017.8696164

Cite this

McLain, M. L., Kyle McDonald, J., Hjalmarson, H. P., Serrano, J. D., Cuoco, R. P., Hanson, D., Hughart, D. R., Marinella, M. J., & Hartman, E. F. (2017). Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells. In 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017 Article 8696164 (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2017.8696164

Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells. / McLain, Michael L.; Kyle McDonald, J.; Hjalmarson, Harold P. et al.
2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8696164 (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

McLain, ML, Kyle McDonald, J, Hjalmarson, HP, Serrano, JD, Cuoco, RP, Hanson, D, Hughart, DR, Marinella, MJ & Hartman, EF 2017, Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells. in 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017., 8696164, 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017, Institute of Electrical and Electronics Engineers Inc., 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017, Geneva, Switzerland, 10/2/17. https://doi.org/10.1109/RADECS.2017.8696164

McLain ML, Kyle McDonald J, Hjalmarson HP, Serrano JD, Cuoco RP, Hanson D et al. Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells. In 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 8696164. (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017). doi: 10.1109/RADECS.2017.8696164

McLain, Michael L. ; Kyle McDonald, J. ; Hjalmarson, Harold P. et al. / Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells. 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017).

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abstract = "The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.",

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AU - Cuoco, Roy P.

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AU - Hughart, David R.

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AB - The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.

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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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