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Temperature dependence of intersubband transitions in InAs/AiSb quantum wells

  • D. C. Larrabee
  • , G. A. Khodaparast
  • , J. Kono
  • , K. Ueda
  • , Y. Nakajima
  • , M. Nakai
  • , S. Sasa
  • , M. Inoue
  • , K. I. Kolokolov
  • , J. Li
  • , C. Z. Ning

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

Original languageEnglish (US)
Pages (from-to)3936-3938
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
StatePublished - Nov 10 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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