@inproceedings{81bb7d1b508944ea8173d743708d9644,
title = "TCAD Calibrated SEE Fault Model Validated with Beam Results for a 12nm D Flip-Flop.",
abstract = "A simple simulation-based approach to accurately estimating the single even effect (SEE) cross section of a standard cell library Flip-Flop is presented. A SPICE level model of charge injection is calibrated to 3D mixed mode technology computer aided design (TCAD) device simulations. The TCAD results for charge collection by distance from the fin are then used to estimate the sensitive area of the Flip-Flop circuit at a given LET. We show good agreement between the circuit simulations and measured results.",
keywords = "Cross-section, FinFET, modeling, single event effects, single event upset, technology CAD",
author = "Clifford Youngsciortino and Jereme Neuendank and Clark, \{Lawrence T\} and Hugh Barnaby and Donald Wilson and Matthew Spear and Aymeric Privat and Marinella, \{Matthew J.\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 22nd European Conference on Radiation and Its Effects on Components and Systems, RADECS 2022 ; Conference date: 03-10-2022 Through 07-10-2022",
year = "2022",
doi = "10.1109/RADECS55911.2022.10412565",
language = "English (US)",
series = "RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems",
}