Abstract
Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.
Original language | English (US) |
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DOIs | |
State | Published - 2012 |
Event | Information Optoelectronics, Nanofabrication and Testing, IONT 2012 - Wuhan, China Duration: Nov 1 2012 → Nov 2 2012 |
Other
Other | Information Optoelectronics, Nanofabrication and Testing, IONT 2012 |
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Country/Territory | China |
City | Wuhan |
Period | 11/1/12 → 11/2/12 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Chemistry