Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

S. Tari; G. Brill; S. Sivananthan; M. Floyd; David Smith

doi:10.1116/1.1377588

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

S. Tari, G. Brill, S. Sivananthan, M. Floyd, David Smith

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The effect of As as a surfactant for the Ge(211)/Si(211) growth orientation was investigated. An attempt was made to compare the effect of growth rates and growth temperatures on the overall layer quality. The resultant data was analyzed in detail.

Original language	English (US)
Pages (from-to)	1562-1566
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1377588
State	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy. / Tari, S.; Brill, G.; Sivananthan, S. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1562-1566.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "The effect of As as a surfactant for the Ge(211)/Si(211) growth orientation was investigated. An attempt was made to compare the effect of growth rates and growth temperatures on the overall layer quality. The resultant data was analyzed in detail.",

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AU - Smith, David

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Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

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