@article{946fef1d9d1c47208c4067196208ef57,
title = "Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiN x stack with <1 cm/s effective surface recombination velocity",
abstract = "The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at <250°C with and without additional corona charging of SiNx is presented. <2 fA/cm 2 surface dark saturation current density and <1 cm/s effective surface recombination velocity were demonstrated on both planar and textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using <5 nm a-Si layers to provide low parasitic absorption. We also report effective minority carrier lifetimes >60 ms on 5000 ω-cm and 20.9 ms on 1.7 ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.",
author = "Stanislau Herasimenka and Tracy, \{Clarence J.\} and Vivek Sharma and Natasa Vulic and Dauksher, \{William J.\} and Stuart Bowden",
note = "Funding Information: This material is based upon work supported in part by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. The authors would also like to acknowledge Ron Sinton from Sinton Instruments for useful discussions and material support.",
year = "2013",
month = oct,
day = "28",
doi = "10.1063/1.4827821",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "18",
}