Abstract
Valence mending of a semiconductor surface, such as the Se-passivated Si(001) surface, improves the chemical and thermal stability of the surface as compared to the bare Si(001) surface. In this paper, we report the suppression of Ni suicide formation between Ni and Si(001) through monolayer passivation of Si(001) by Se. Ni was deposited on both Se-passivated and bare Si(001) surfaces. The samples were annealed t temperatures from 400°C to 700°C. Cross-sectional TEM (Transmission Electron Microscopy) revealed that Ni on bare samples reacted with Si at 400°C and formed suicide, whereas Ni on Se-passivated samples did not react with Si at 500°C. Surface composition analysis by XPS (X-Ray Photoelectron Spectroscopy) showed pure Ni surface on Se-passivated samples annealed at 400°C and 500°C, but suicide surface on bare samples annealed at the same temperatures. Hence, Se passivation suppresses the formation of Ni suicide on the Si(001) surface by over 100°C as compared to the bare Si(001) surface. These results may have important implications in source/drain engineering in sub-100 nm Si CMOS (Complementary Metal Oxide Semiconductor) devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | P. Pichler, A. Claverie, R. Lindsay, M. Orlowski, W. Windl |
| Pages | 129-134 |
| Number of pages | 6 |
| Volume | 810 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | Silicon Front-End Junction Formation - Physics and Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004 |
Other
| Other | Silicon Front-End Junction Formation - Physics and Technology |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/13/04 → 4/15/04 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials