Suppression of Ni silicide formation by Se passivation of Si(001)

Janadass Shanmugam, Michael Coviello, Darshak Udeshi, Wiley P. Kirk, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Valence mending of a semiconductor surface, such as the Se-passivated Si(001) surface, improves the chemical and thermal stability of the surface as compared to the bare Si(001) surface. In this paper, we report the suppression of Ni suicide formation between Ni and Si(001) through monolayer passivation of Si(001) by Se. Ni was deposited on both Se-passivated and bare Si(001) surfaces. The samples were annealed t temperatures from 400°C to 700°C. Cross-sectional TEM (Transmission Electron Microscopy) revealed that Ni on bare samples reacted with Si at 400°C and formed suicide, whereas Ni on Se-passivated samples did not react with Si at 500°C. Surface composition analysis by XPS (X-Ray Photoelectron Spectroscopy) showed pure Ni surface on Se-passivated samples annealed at 400°C and 500°C, but suicide surface on bare samples annealed at the same temperatures. Hence, Se passivation suppresses the formation of Ni suicide on the Si(001) surface by over 100°C as compared to the bare Si(001) surface. These results may have important implications in source/drain engineering in sub-100 nm Si CMOS (Complementary Metal Oxide Semiconductor) devices.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsP. Pichler, A. Claverie, R. Lindsay, M. Orlowski, W. Windl
Number of pages6
StatePublished - 2004
Externally publishedYes
EventSilicon Front-End Junction Formation - Physics and Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004


OtherSilicon Front-End Junction Formation - Physics and Technology
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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