Abstract
We model the subpicosecond evolution of a nonthermal electron distribution injected into a GaAs/AlGaAs quantum well using an ensemble Monte Carlo simulation which includes electron-electron scattering. The calculated results are in good agreement with the experimental time dependence of the carrier distribution function from recent bleaching experiments with carrier-carrier scattering the dominant mechanism contributing to band filling.
Original language | English (US) |
---|---|
Pages (from-to) | 584-586 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 51 |
Issue number | 8 |
DOIs | |
State | Published - Dec 1 1987 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)